Advanced Interconnects for ULSI Technology

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance.

Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses:

• Interconnect functions, characterisations, electrical properties and wiring requirements
• Low-k materials: fundamentals, advances and mechanical  properties
• Conductive layers and barriers
• Integration and reliability including mechanical reliability, electromigration and electrical breakdown
• New approaches including 3D, optical, wireless interchip, and carbon-based interconnects

Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Content:
Chapter 1 Low?k Materials: Recent Advances (pages 1–33): Geraud Dubois and Willi Volksen
Chapter 2 Ultra?Low?k by CVD: Deposition and Curing (pages 35–77): Vincent Jousseaume, Aziz Zenasni, Olivier Gourhant, Laurent Favennec and Mikhail R. Baklanov
Chapter 3 Plasma Processing of Low?k Dielectrics (pages 79–128): Hualiang Shi, Denis Shamiryan, Jean?Francois de Marneffe, Huai Huang, Paul S. Ho and Mikhail R. Baklanov
Chapter 4 Wet Clean Applications in Porous Low?k Patterning Processes (pages 129–171): Quoc Toan Le, Guy Vereecke, Herbert Struyf, Els Kesters and Mikhail R. Baklanov
Chapter 5 Copper Electroplating for On?Chip Metallization (pages 173–191): Valery M. Dubin
Chapter 6 Diffusion Ba